Part number:
IPT60R102G7XTMA1
晶体管
Infineon Technologies
MOSFET HIGH POW
HSOF-8
RoHS
YES
TYPE | DESCRIPTION |
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | Si |
Mounting Style: | SMD/SMT |
Package / Case: | HSOF-8 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Id - Continuous Drain Current: | 23 A |
Rds On - Drain-Source Resistance: | 88 mOhms |
Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 34 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 141 W |
Channel Mode: | Enhancement |
Packaging: | Reel |
Packaging: | Cut Tape |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 4 ns |
Product Type: | MOSFET |
Rise Time: | 5 ns |
Series: | CoolMOS G7 |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 60 ns |
Typical Turn-On Delay Time: | 18 ns |
Part # Aliases: | IPT60R102G7 SP001579318 |
Unit Weight: | 0.027197 oz |