Part number:
IKW50N65ET7XKSA1
晶体管
Infineon Technologies
IGBT Transistor
TO-247-3
RoHS
YES
TYPE | DESCRIPTION |
Manufacturer: | Infineon |
Product Category: | IGBT Transistors |
RoHS: | Details |
Technology: | Si |
Package / Case: | TO-247-3 |
Mounting Style: | Through Hole |
Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.65 V |
Maximum Gate Emitter Voltage: | 20 V |
Continuous Collector Current at 25 C: | 80 A |
Pd - Power Dissipation: | 273 W |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 175 C |
Series: | Trenchstop IGBT7 |
Packaging: | Tube |
Brand: | Infineon Technologies |
Gate-Emitter Leakage Current: | 100 nA |
Product Type: | IGBT Transistors |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Subcategory: | IGBTs |
Tradename: | TRENCHSTOP |
Part # Aliases: | IKW50N65ET7 SP005348292 |