Part number:
IRHNS67264
金属氧化物半导体场效应晶体管阵列
Infineon
IRHNS67264 data
-
RoHS
YES
TYPE | DESCRIPTION |
Material | Si |
ECCN (US) | EAR99 |
Automotive | No |
PPAP | No |
Category | Power MOSFET |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 250 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 50 |
Typical Gate Charge @ Vgs (nC) | 220(Max)@12V |
Typical Input Capacitance @ Vds (pF) | 6912@25V |
Maximum Power Dissipation (mW) | 250000 |
Typical Fall Time (ns) | 50(Max) |
Typical Rise Time (ns) | 150(Max) |
Typical Turn-Off Delay Time (ns) | 100(Max) |
Typical Turn-On Delay Time (ns) | 50(Max) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Configuration | Single |
Channel Type | N |