Part number:
IRHNA67260SCS
金属氧化物半导体场效应晶体管阵列
Infineon
IRHNA67260SCS d
-
RoHS
YES
TYPE | DESCRIPTION |
EU RoHS | Not Compliant |
ECCN (US) | EAR99 |
Automotive | No |
PPAP | No |
Category | Power MOSFET |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 200 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 56 |
Typical Gate Charge @ Vgs (nC) | 240(Max)@12V |
Typical Input Capacitance @ Vds (pF) | 8120@25V |
Maximum Power Dissipation (mW) | 250000 |
Typical Fall Time (ns) | 30(Max) |
Typical Rise Time (ns) | 60(Max) |
Typical Turn-Off Delay Time (ns) | 70(Max) |
Typical Turn-On Delay Time (ns) | 40(Max) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Mounting | Surface Mount |
Package Height | 3.07(Max) |
Package Width | 17.65(Max) |
Package Length | 13.46(Max) |
PCB changed | 3 |
Standard Package Name | SMD |
Supplier Package | SMD-2 |
Part Status | Active |
Pin Count | 3 |
Configuration | Single |
Channel Type | N |