Part number:
IRHNA593Z60
金属氧化物半导体场效应晶体管阵列
Infineon
IRHNA593Z60 dat
-
RoHS
YES
TYPE | DESCRIPTION |
EU RoHS | Not Compliant |
ECCN (US) | Contact Export |
HTS | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Category | Power MOSFET |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Continuous Drain Current (A) | 56 |
Maximum Drain Source Resistance (mOhm) | 13@12V |
Typical Gate Charge @ Vgs (nC) | 220(Max)@12V |
Typical Input Capacitance @ Vds (pF) | 7844@25V |
Maximum Power Dissipation (mW) | 250000 |
Typical Fall Time (ns) | 80(Max) |
Typical Rise Time (ns) | 175(Max) |
Typical Turn-Off Delay Time (ns) | 100(Max) |
Typical Turn-On Delay Time (ns) | 35(Max) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Mounting | Surface Mount |
Package Height | 3.07(Max) |
Package Width | 17.65(Max) |
Package Length | 13.46(Max) |
PCB changed | 3 |
Standard Package Name | SMD |
Supplier Package | SMD-2 |
Part Status | Preliminary |
Pin Count | 3 |
Configuration | Single |
Channel Type | P |