Part number:
DATA-2N6849JANTX
金属氧化物半导体场效应晶体管阵列
Infineon
DATA-2N6849JANT
-
RoHS
YES
TYPE | DESCRIPTION |
EU RoHS | Not Compliant |
ECCN (US) | EAR99 |
HTS | 8541.21.00.75 |
Automotive | No |
PPAP | No |
Category | Power MOSFET |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Operating Junction Temperature (°C) | -55 to 150 |
Maximum Continuous Drain Current (A) | 6.5 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 25 |
Typical Gate Charge @ Vgs (nC) | 34.8(Max)@10V |
Typical Gate Charge @ 10V (nC) | 34.8(Max) |
Typical Gate to Drain Charge (nC) | 23.1(Max) |
Typical Gate to Source Charge (nC) | 6.8(Max) |
Typical Input Capacitance @ Vds (pF) | 800@25V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 125@25V |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Output Capacitance (pF) | 350 |
Maximum Power Dissipation (mW) | 25000 |
Typical Fall Time (ns) | 140(Max) |
Typical Rise Time (ns) | 140(Max) |
Typical Turn-Off Delay Time (ns) | 140(Max) |
Typical Turn-On Delay Time (ns) | 60(Max) |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Temperature Grade | Military |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 25 |
Maximum Diode Forward Voltage (V) | 4.3 |
Mounting | Through Hole |
Package Height | 4.54(Max) |
PCB changed | 3 |
Standard Package Name | TO-205-AF |
Supplier Package | TO-39 |
Lead Shape | Through Hole |
Part Status | Active |
Pin Count | 3 |
Configuration | Single |
Channel Type | P |
Diameter | 9.22(Max) |