Part number:
AUIRL7736M2TR1
金属氧化物半导体场效应晶体管阵列
Infineon
AUIRL7736M2TR1
-
RoHS
YES
TYPE | DESCRIPTION |
Surface Mount | YES |
Material | Si |
Number of Terminals | 5 |
Transistor Element Material | SILICON |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | Yes |
PPAP | Unknown |
Category | Power MOSFET |
Process Technology | DirectFET |
Channel Mode | Enhancement |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 40 |
Maximum Gate Source Voltage (V) | ±16 |
Maximum Continuous Drain Current (A) | 22 |
Maximum Drain Source Resistance (mOhm) | 3@10V |
Typical Gate Charge @ Vgs (nC) | 52@4.5V |
Typical Input Capacitance @ Vds (pF) | 5055@25V |
Maximum Power Dissipation (mW) | 2500 |
Typical Fall Time (ns) | 76 |
Typical Rise Time (ns) | 210 |
Typical Turn-Off Delay Time (ns) | 56 |
Typical Turn-On Delay Time (ns) | 48 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Temperature Grade | Automotive |
Mounting | Surface Mount |
Package Height | 0.49(Max) |
Package Width | 5.05(Max) |
Package Length | 5.45(Max) |
PCB changed | 9 |
Supplier Package | Direct-FET M4 |
Package Shape | RECTANGULAR |
Manufacturer | International Rectifier |
Packaging | Tape and Reel |
JESD-609 Code | e3 |
Pbfree Code | Yes |
Part Status | Obsolete |
ECCN Code | EAR99 |
Terminal Finish | MATTE TIN |
Additional Feature | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | compliant |
Pin Count | 9 |
JESD-30 Code | R-XBCC-N5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | Single Quad Drain Quad Source |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Transistor Application | SWITCHING |
Polarity/Channel Type | N-CHANNEL |
Drain Current-Max (Abs) (ID) | 112 A |
Drain-source On Resistance-Max | 0.003 Ω |
Pulsed Drain Current-Max (IDM) | 450 A |
DS Breakdown Voltage-Min | 40 V |
Channel Type | N |
Avalanche Energy Rating (Eas) | 119 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 63 W |