Part number:
BFR 193 E6327
晶体管 - 双极 (BJT) - 射频
Infineon Technologies
TRANSISTOR NPN
TO-236-3, SC-59, SOT-23-3
RoHS
YES
TYPE | DESCRIPTION |
Manufacturer | Infineon Technologies |
Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF |
Package | TO-236-3, SC-59, SOT-23-3 |
ECAD | |
Series | - |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 8GHz |
Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
Gain | 10dB ~ 15dB |
Power - Max | 580mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
Current - Collector (Ic) (Max) | 80mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3 |