Part number:
FF11MR12W1M1B11BOMA1
金属氧化物半导体场效应晶体管
Infineon
FF11MR12W1M1_B1
Tray
RoHS
-
TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain-Source On Resistance-Max: | 11.3mΩ |
Rated Power Dissipation: | 20mW |
Qg Gate Charge: | 248nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 100A |
Turn-on Delay Time: | 25.1ns |
Turn-off Delay Time: | 64.3ns |
Rise Time: | 16.4ns |
Fall Time: | 28ns |
Operating Temp Range: | -40°C to +150°C |
Gate Source Threshold: | 4.5V |
Input Capacitance: | 7.36nF |
Mounting Method: | Chassis Mount |