Part number:
MRFE6VS25LR5
RF功率场效应晶体管
NXP Semiconductors
NXP Semiconduct
RoHS
YES
TYPE | DESCRIPTION |
Source Content uid: | MRFE6VS25LR5 |
Manufacturer Part Number: | MRFE6VS25LR5 |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | FLANGE MOUNT, R-PDFM-F2 |
Reach Compliance Code: | compliant |
ECCN Code: | EAR99 |
HTS Code: | 8541.29.00.75 |
Manufacturer: | NXP Semiconductors |
Risk Rank: | 1.7 |
Configuration: | SINGLE |
DS Breakdown Voltage-Min: | 133 V |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
JESD-30 Code: | R-PDFM-F2 |
Number of Elements: | 1 |
Number of Terminals: | 2 |
Operating Mode: | ENHANCEMENT MODE |
Operating Temperature-Max: | 150 °C |
Operating Temperature-Min: | -40 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | FLANGE MOUNT |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | N-CHANNEL |
Power Gain-Min (Gp): | 24.5 dB |
Subcategory: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Form: | FLAT |
Terminal Position: | DUAL |
Time@Peak Reflow Temperature-Max (s): | 40 |
Transistor Element Material: | SILICON |