Part number:
NVMFS5C426NLT1G
功率场效应晶体管
onsemi
onsemi
RoHS
YES
TYPE | DESCRIPTION |
Source Content uid: | NVMFS5C426NLT1G |
Manufacturer Part Number: | NVMFS5C426NLT1G |
Brand Name: | ON Semiconductor |
Pbfree Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | SMALL OUTLINE, R-PDSO-F5 |
Manufacturer Package Code: | 488AA |
Reach Compliance Code: | not_compliant |
ECCN Code: | EAR99 |
Manufacturer: | onsemi |
Risk Rank: | 0.64 |
Avalanche Energy Rating (Eas): | 453 mJ |
Case Connection: | DRAIN |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 40 V |
Drain Current-Max (Abs) (ID): | 237 A |
Drain Current-Max (ID): | 237 A |
Drain-source On Resistance-Max: | 0.0018 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss): | 70 pF |
JESD-30 Code: | R-PDSO-F5 |
JESD-609 Code: | e3 |
Number of Elements: | 1 |
Number of Terminals: | 5 |
Operating Mode: | ENHANCEMENT MODE |
Operating Temperature-Max: | 175 °C |
Operating Temperature-Min: | -55 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Power Dissipation-Max (Abs): | 128 W |
Pulsed Drain Current-Max (IDM): | 1480 A |
Reference Standard: | AEC-Q101 |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
Terminal Form: | FLAT |
Terminal Position: | DUAL |
Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
Transistor Element Material: | SILICON |