Part number:
IRF3415STRLPBF
功率场效应晶体管
Infineon Technologies AG
Infineon Techno
RoHS
YES
IRF3415STRLPBF
IRF3415STRLPBF
| TYPE | DESCRIPTION |
| Source Content uid: | IRF3415STRLPBF |
| Manufacturer Part Number: | IRF3415STRLPBF |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Active |
| Package Description: | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code: | not_compliant |
| ECCN Code: | EAR99 |
| Manufacturer: | Infineon Technologies AG |
| Risk Rank: | 0.92 |
| Additional Feature: | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Rating (Eas): | 590 mJ |
| Case Connection: | DRAIN |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min: | 150 V |
| Drain Current-Max (ID): | 43 A |
| Drain-source On Resistance-Max: | 0.042 Ω |
| FET Technology: | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code: | R-PSSO-G2 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 1 |
| Number of Elements: | 1 |
| Number of Terminals: | 2 |
| Operating Mode: | ENHANCEMENT MODE |
| Package Body Material: | PLASTIC/EPOXY |
| Package Shape: | RECTANGULAR |
| Package Style: | SMALL OUTLINE |
| Peak Reflow Temperature (Cel): | 260 |
| Polarity/Channel Type: | N-CHANNEL |
| Pulsed Drain Current-Max (IDM): | 150 A |
| Qualification Status: | Not Qualified |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal Form: | GULL WING |
| Terminal Position: | SINGLE |
| Time@Peak Reflow Temperature-Max (s): | 30 |
| Transistor Application: | SWITCHING |
| Transistor Element Material: | SILICON |
