Part number:
FQD5N20LTM
功率场效应晶体管
onsemi
onsemi
RoHS
YES
TYPE | DESCRIPTION |
Source Content uid: | FQD5N20LTM |
Manufacturer Part Number: | FQD5N20LTM |
Brand Name: | ON Semiconductor |
Pbfree Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | SMALL OUTLINE, R-PSSO-G2 |
Manufacturer Package Code: | 369AS |
Reach Compliance Code: | not_compliant |
ECCN Code: | EAR99 |
Manufacturer: | onsemi |
Risk Rank: | 0.66 |
Avalanche Energy Rating (Eas): | 60 mJ |
Case Connection: | DRAIN |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 200 V |
Drain Current-Max (Abs) (ID): | 3.8 A |
Drain Current-Max (ID): | 3.8 A |
Drain-source On Resistance-Max: | 1.25 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code: | TO-252 |
JESD-30 Code: | R-PSSO-G2 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 1 |
Number of Elements: | 1 |
Number of Terminals: | 2 |
Operating Mode: | ENHANCEMENT MODE |
Operating Temperature-Max: | 150 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Power Dissipation-Max (Abs): | 37 W |
Pulsed Drain Current-Max (IDM): | 15.2 A |
Qualification Status: | Not Qualified |
Subcategory: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
Terminal Form: | GULL WING |
Terminal Position: | SINGLE |
Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
Transistor Application: | SWITCHING |
Transistor Element Material: | SILICON |