Discrete Semiconductor Products
Power Supply
  • BSC035N04LSGATMA1
  • BSC035N04LSGATMA1
  • BSC035N04LSGATMA1
    Part number:
    BSC035N04LSGATMA1
    功率场效应晶体管
    Infineon Technologies AG
    Infineon Techno
    RoHS
    YES
    BSC035N04LSGATMA1
    TYPEDESCRIPTION
    Source Content uid:BSC035N04LSGATMA1
    Manufacturer Part Number:BSC035N04LSGATMA1
    Pbfree Code:No
    Rohs Code:Yes
    Part Life Cycle Code:Active
    Package Description:SMALL OUTLINE, R-PDSO-F5
    Pin Count:8
    Reach Compliance Code:not_compliant
    ECCN Code:EAR99
    Manufacturer:Infineon Technologies AG
    Risk Rank:0.93
    Additional Feature:LOGIC LEVEL COMPATIBLE
    Avalanche Energy Rating (Eas):65 mJ
    Case Connection:DRAIN
    Configuration:SINGLE WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min:40 V
    Drain Current-Max (ID):21 A
    Drain-source On Resistance-Max:0.0053 Ω
    FET Technology:METAL-OXIDE SEMICONDUCTOR
    JESD-30 Code:R-PDSO-F5
    JESD-609 Code:e3
    Moisture Sensitivity Level:1
    Number of Elements:1
    Number of Terminals:5
    Operating Mode:ENHANCEMENT MODE
    Operating Temperature-Max:150 °C
    Package Body Material:PLASTIC/EPOXY
    Package Shape:RECTANGULAR
    Package Style:SMALL OUTLINE
    Peak Reflow Temperature (Cel):NOT SPECIFIED
    Polarity/Channel Type:N-CHANNEL
    Pulsed Drain Current-Max (IDM):400 A
    Qualification Status:Not Qualified
    Surface Mount:YES
    Terminal Finish:Tin (Sn)
    Terminal Form:FLAT
    Terminal Position:DUAL
    Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
    Transistor Application:SWITCHING
    Transistor Element Material:SILICON
    18420013273
    Aaron@xtcsg.com