Part number:
PDTC114YS,126
晶体管 - 双极(BJT)- 单,预偏置
NXP USA Inc.
TRANS PREBIAS N
Tape & Box (TB)
RoHS
-
TYPE | DESCRIPTION |
Mfr | NXP USA Inc. |
Series | - |
Package | Tape & Box (TB) |
Product Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Power - Max | 500 mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 |
Base Product Number | PDTC114 |