Part number:
IPG20N06S4L26AATMA1
RF Transistors
Infineon
thermal transfe
8-PowerVDFN
RoHS
YES
TYPE | DESCRIPTION |
Manufacturer Part Number: | IPG20N06S4L26AATMA1 |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Ihs Manufacturer: | INFINEON TECHNOLOGIES AG |
Package Description: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | not_compliant |
ECCN Code: | EAR99 |
Factory Lead Time: | 26 Weeks |
Manufacturer: | Infineon Technologies AG |
Risk Rank: | 1.67 |
Avalanche Energy Rating (Eas): | 35 mJ |
Case Connection: | DRAIN |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 60 V |
Drain Current-Max (ID): | 20 A |
Drain-source On Resistance-Max: | 0.026 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code: | R-PDSO-F6 |
JESD-609 Code: | e3 |
Number of Elements: | 2 |
Number of Terminals: | 6 |
Operating Mode: | ENHANCEMENT MODE |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Pulsed Drain Current-Max (IDM): | 80 A |
Reference Standard: | AEC-Q101 |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
Terminal Form: | FLAT |
Terminal Position: | DUAL |
[email protected] Reflow Temperature-Max (s): | NOT SPECIFIED |
Transistor Element Material: | SILICON |