Part number:
IRFI520NPBF
Single MOSFETs Transistors
Infineon
Bulk 100
-
RoHS
YES
TYPE | DESCRIPTION |
Mount | Through Hole |
Surface Mount | NO |
Number of Pins | 3 |
Number of Terminals | 3 |
Transistor Element Material | SILICON |
Turn-On Delay Time | 4.5 ns |
Voltage Rating (DC) | 100 V |
RoHS | Compliant |
Package Shape | RECTANGULAR |
Manufacturer | International Rectifier |
Packaging | Bulk |
JESD-609 Code | e3 |
Pbfree Code | Yes |
Termination | Through Hole |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Max Operating Temperature | 175 °C |
Min Operating Temperature | -55 °C |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Max Power Dissipation | 30 W |
Terminal Position | SINGLE |
Terminal Form | THROUGH-HOLE |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 7.6 A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 30 W |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Rise Time | 23 ns |
Drain to Source Voltage (Vdss) | 100 V |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 7.6 A |
Threshold Voltage | 4 V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20 V |
Drain Current-Max (Abs) (ID) | 7.2 A |
Drain-source On Resistance-Max | 0.2 Ω |
Drain to Source Breakdown Voltage | 100 V |
Pulsed Drain Current-Max (IDM) | 38 A |
Dual Supply Voltage | 100 V |
Input Capacitance | 330 pF |
DS Breakdown Voltage-Min | 100 V |
Avalanche Energy Rating (Eas) | 91 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 27 W |
Drain to Source Resistance | 200 mΩ |
Nominal Vgs | 4 V |
Width | 4.826 mm |
Height | 9.8044 mm |
Length | 10.6172 mm |
REACH SVHC | No SVHC |
Radiation Hardening | No |
Lead Free | Lead Free |