Part number:
IRF6614TR1
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tape
DirectFET™ Isometric ST
RoHS
YES
TYPE | DESCRIPTION |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric ST |
Number of Pins | 7 |
Supplier Device Package | DIRECTFET™ ST |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | HEXFET® |
Published | 2006 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Resistance | 8.3mOhm |
Max Operating Temperature | 150°C |
Min Operating Temperature | -40°C |
Power Dissipation-Max | 2.1W Ta 42W Tc |
Power Dissipation | 2.1W |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12.7A, 10V |
Vgs(th) (Max) @ Id | 2.25V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2560pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 12.7A Ta 55A Tc |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 18 ns |
Reverse Recovery Time | 15 ns |
Continuous Drain Current (ID) | 10.1A |
Threshold Voltage | 1.8V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Input Capacitance | 2.56nF |
Drain to Source Resistance | 5.9mOhm |
Rds On Max | 8.3 mΩ |
Nominal Vgs | 1.8 V |
Width | 3.95mm |
REACH SVHC | No SVHC |
RoHS Status | Non-RoHS Compliant |