Part number:
BSP125 E6327
Single MOSFETs Transistors
Infineon Technologies
N-Channel Tape
TO-261-4, TO-261AA
RoHS
YES
TYPE | DESCRIPTION |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | SIPMOS® |
Published | 2007 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
HTS Code | 8541.29.00.95 |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 255 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.8W Ta |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 45 Ω @ 120mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 94μA |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 120mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 0.12A |
Pulsed Drain Current-Max (IDM) | 0.48A |
DS Breakdown Voltage-Min | 600V |
RoHS Status | Non-RoHS Compliant |