Part number:
IRLR7821CTRPBF
金属氧化物半导体场效应晶体管阵列
Infineon
IRLR7821CTRPBF
-
RoHS
YES
TYPE | DESCRIPTION |
Surface Mount | YES |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
SVHC | Yes |
SVHC Exceeds Threshold | Yes |
Automotive | No |
PPAP | No |
Category | Power MOSFET |
Process Technology | HEXFET |
Channel Mode | Enhancement |
Manufacturer | International Rectifier |
Lead Shape | Gull-wing |
Supplier Package | DPAK |
Standard Package Name | TO-252 |
Tab | Tab |
PCB changed | 2 |
Package Length | 6.73(Max) |
Package Width | 6.22(Max) |
Package Height | 2.39(Max) |
Mounting | Surface Mount |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Typical Turn-On Delay Time (ns) | 11 |
Typical Turn-Off Delay Time (ns) | 10 |
Typical Rise Time (ns) | 4.2 |
Typical Fall Time (ns) | 3.2 |
Maximum Power Dissipation (mW) | 75000 |
Typical Input Capacitance @ Vds (pF) | 1030@15V |
Typical Gate Charge @ Vgs (nC) | 10@4.5V |
Maximum Drain Source Resistance (mOhm) | 10@10V |
Maximum Continuous Drain Current (A) | 65 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Voltage (V) | 30 |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
JESD-609 Code | e3 |
Pbfree Code | Yes |
Part Status | Obsolete |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | FET General Purpose Power |
Reach Compliance Code | not_compliant |
Pin Count | 3 |
Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Polarity/Channel Type | N-CHANNEL |
Drain Current-Max (Abs) (ID) | 65 A |
Channel Type | N |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 75 W |