Part number:
PDTD123ES,126
预偏置双极性结型晶体管
NXP USA Inc.
PDTD123ES,126 d
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
RoHS
YES
TYPE | DESCRIPTION |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Packaging | Tape & Box (TB) |
Published | 2009 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Base Part Number | PDTD123 |
Power - Max | 500mW |
Transistor Type | NPN - Pre-Biased |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA 5V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 500mA |
Resistor - Base (R1) | 2.2 k Ω |
Resistor - Emitter Base (R2) | 2.2 k Ω |
RoHS Status | ROHS3 Compliant |