Part number:
IRF7314TRPBF
Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
Transistors - F
Tape & Reel (TR)
RoHS
YES
TYPE | DESCRIPTION |
Factory Lead Time | 12 Weeks |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 1997 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 58mOhm |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | -20V |
Max Power Dissipation | 2W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -5.3A |
[email protected] Reflow Temperature-Max (s) | 30 |
Base Part Number | IRF7314PBF |
Number of Elements | 2 |
Row Spacing | 6.3 mm |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 15 ns |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 58m Ω @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.3A |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
Rise Time | 40ns |
Drain to Source Voltage (Vdss) | 20V |
Fall Time (Typ) | 49 ns |
Turn-Off Delay Time | 41 ns |
Continuous Drain Current (ID) | -5.3A |
Threshold Voltage | -700mV |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | -20V |
Avalanche Energy Rating (Eas) | 150 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Recovery Time | 71 ns |
FET Feature | Logic Level Gate |
Nominal Vgs | -700 mV |
Height | 1.4986mm |
Length | 4.9784mm |
Width | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |