Part number:
FGA40T65SHD
IGBTs
onsemi
onsemi
RoHS
YES
TYPE | DESCRIPTION |
Source Content uid: | FGA40T65SHD |
Manufacturer Part Number: | FGA40T65SHD |
Brand Name: | ON Semiconductor |
Pbfree Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | FLANGE MOUNT, R-PSFM-T3 |
Manufacturer Package Code: | 340BZ |
Reach Compliance Code: | compliant |
ECCN Code: | EAR99 |
Manufacturer: | onsemi |
Risk Rank: | 1.52 |
Additional Feature: | LOW CONDUCTION LOSS |
Collector Current-Max (IC): | 80 A |
Collector-Emitter Voltage-Max: | 650 V |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Gate-Emitter Thr Voltage-Max: | 7.5 V |
Gate-Emitter Voltage-Max: | 20 V |
JESD-30 Code: | R-PSFM-T3 |
JESD-609 Code: | e3 |
Number of Elements: | 1 |
Number of Terminals: | 3 |
Operating Temperature-Max: | 175 °C |
Operating Temperature-Min: | -55 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | FLANGE MOUNT |
Peak Reflow Temperature (Cel): | NOT SPECIFIED |
Polarity/Channel Type: | N-CHANNEL |
Power Dissipation-Max (Abs): | 268 W |
Surface Mount: | NO |
Terminal Finish: | Tin (Sn) |
Terminal Form: | THROUGH-HOLE |
Terminal Position: | SINGLE |
Time@Peak Reflow Temperature-Max (s): | NOT SPECIFIED |
Transistor Application: | POWER CONTROL |
Transistor Element Material: | SILICON |
Turn-off Time-Nom (toff): | 85.6 ns |
Turn-on Time-Nom (ton): | 51.2 ns |
VCEsat-Max: | 2.1 V |