Part number:
IRFR5410TRLPBF
Power Field-Effect Transistors
Infineon Technologies AG
Infineon Techno
RoHS
YES
TYPE | DESCRIPTION |
Source Content uid: | IRFR5410TRLPBF |
Manufacturer Part Number: | IRFR5410TRLPBF |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | not_compliant |
ECCN Code: | EAR99 |
Manufacturer: | Infineon Technologies AG |
Risk Rank: | 0.79 |
Additional Feature: | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE |
Avalanche Energy Rating (Eas): | 194 mJ |
Case Connection: | DRAIN |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 100 V |
Drain Current-Max (Abs) (ID): | 13 A |
Drain Current-Max (ID): | 13 A |
Drain-source On Resistance-Max: | 0.205 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code: | TO-252AA |
JESD-30 Code: | R-PSSO-G2 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 1 |
Number of Elements: | 1 |
Number of Terminals: | 2 |
Operating Mode: | ENHANCEMENT MODE |
Operating Temperature-Max: | 150 °C |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | P-CHANNEL |
Power Dissipation-Max (Abs): | 66 W |
Pulsed Drain Current-Max (IDM): | 52 A |
Qualification Status: | Not Qualified |
Subcategory: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal Form: | GULL WING |
Terminal Position: | SINGLE |
Time@Peak Reflow Temperature-Max (s): | 30 |
Transistor Application: | SWITCHING |
Transistor Element Material: | SILICON |